COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.092 INCHES MINIMUM AND |
| 0.104 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |