| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
| MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND |
| 1 CASE ALL TRANSISTOR |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL HEIGHT | 0.380 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| TEST DATA DOCUMENT | 82260-8150000414 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |