SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 12.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 1.50 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 142.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.270 INCHES NOMINAL |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
INTERNAL JUNCTION CONFIGURATION | NPN |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
TERMINAL LENGTH | 0.406 INCHES NOMINAL |
TERMINAL CIRCLE DIAMETER | 0.281 INCHES NOMINAL |
OVERALL DIAMETER | 0.524 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |